?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com fga15n120antd / fga15n120antd_f109 rev. c0 fga15n120antd / fga15n120antd_f 109 1200 v, 15 a npt trench igbt april 2013 fga15n120antd / fga15n120antd_f109 1200 v, 15 a npt trench igbt features ? npt trench technology, positi ve temperature coefficient ? low saturation voltage: v ce(sat), typ = 1.9 v ? @ i c = 15 a and t c = 25 ? c ? low switching loss: e off, typ = 0.6mj ? @ i c = 15 a and t c = 25 ? c ? extremely enhanced avalanche capability description using fairchild ? 's proprietary trench design and advanced npt technology, the 1200v npt igbt offers superior conduction and switching performances , high avalanche ruggedness and easy parallel operation. this device is well suited for t he resonant or sof t switching appli - cation such as induction heating, microwave oven. g c e g c e g c e to-3p absolute maximum ratings symbol description fga15n120antd unit v ces collector-emitter voltage 1200 v v ges gate-emitter voltage ? 20 v i c collector current @ t c = 25 ? c 30 a collector current @ t c = 100 ? c 15 a i cm pulsed collector current (note 1) 45 a i f diode continuous forward current @ t c = 100 ? c 15 a i fm diode maximum forward current 45 a p d maximum power dissipation @ t c = 25 ? c 186 w maximum power dissipation @ t c = 100 ? c 74 w t j operating junction temperature -55 to +150 ? c t stg storage temperature range -55 to +150 ? c t l maximum lead temp. for soldering ? purposes, 1/8? from case for 5 seconds 300 ? c thermal characteristics symbol parameter typ. max. unit r ? jc thermal resistance, junction-to-case for igbt -- 0.67 ? c /w r ? jc thermal resistance, junction-to-case for diode -- 2.88 ? c /w r ? ja thermal resistance, junction-to-ambient -- 40 ? c /w notes: (1) repetitive rating: pulse width limited by max. junction temperature
fga15n120antd / fga15n120antd_f 109 1200 v, 15 a npt trench igbt ?2006 fairchild semiconductor corporation 2 www.fairchildsemi.com fga15n120antd / fga15n120antd_f109 rev. c0 package marking and ordering information device marking device package reel size tape width quantity fga15n120antd fga15n120antd to-3p -- -- 30 electrical characteristi cs of the igbt t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max. unit ? off characteristics i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 3 ma i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 250 na ? on characteristics v ge(th) g-e threshold voltage i c = 15ma, v ce = v ge 4.5 6.5 8.5 v v ce(sat) collector to emitter saturation voltage i c = 15a , v ge = 15v -- 1.9 2.4 v i c = 15a , v ge = 15v, t c = 1 25 ? c -- 2.2 -- v i c = 30a , v ge = 15v -- 2.3 -- v ? dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz -- 2650 -- pf c oes output capacitance -- 143 -- pf c res reverse transfer capacitance -- 96 -- pf ? switching characteristics t d(on) turn-on delay time v cc = 600 v, i c = 15a, r g = 10 ? , v ge = 15v, inductive load, t c = 25? c -- 15 -- ns t r rise time -- 20 -- ns t d(off) turn-off delay time -- 160 -- ns t f fall time -- 100 180 ns e on turn-on switching loss -- 3 4.5 mj e off turn-off switching loss -- 0.6 0.9 mj e ts total switching loss -- 3.6 5.4 mj t d(on) turn-on delay time v cc = 600 v, i c = 15a, r g = 10 ? , v ge = 15v, inductive load, t c = 125 ? c -- 15 -- ns t r rise time -- 20 -- ns t d(off) turn-off delay time -- 170 -- ns t f fall time -- 150 -- ns e on turn-on switching loss -- 3.2 4.8 mj e off turn-off switching loss -- 0.8 1.2 mj e ts total switching loss -- 4.0 6.0 mj q g total gate charge v ce = 600 v, i c = 15a, v ge = 15v -- 120 180 nc q ge gate-emitter charge -- 16 22 nc q gc gate-collector charge -- 50 65 nc
fga15n120antd / fga15n120antd_f 109 1200 v, 15 a npt trench igbt ?2006 fairchild semiconductor corporation 3 www.fairchildsemi.com fga15n120antd / fga15n120antd_f109 rev. c0 electrical characteristics of diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max. unit v fm diode forward voltage i f = 15a t c = 25? c -- 1.7 2.7 v t c = 125 ? c -- 1.8 -- t rr diode reverse recovery time i f = 15a di/dt = 200 a/ ? s t c = 25? c -- 210 330 ns t c = 125 ? c -- 280 -- i rr diode peak reverse recovery cur - rent t c = 25? c -- 27 40 a t c = 125 ? c -- 31 -- q rr diode reverse recovery charge t c = 25? c -- 2835 6600 nc t c = 125 ? c -- 4340 --
fga15n120antd / fga15n120antd_f 109 1200 v, 15 a npt trench igbt ?2006 fairchild semiconductor corporation 4 www.fairchildsemi.com fga15n120antd / fga15n120antd_f109 rev. c0 typical performance characteristics figure 1. typical output characteristics figure 2. typical saturation voltage 024681 0 0 50 100 150 200 t c = 25 o c 20v 17v 15v 12v v ge = 10v collector current, i c [a] collector-emitter voltage, v ce [v] 0246 0 30 60 90 120 150 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current , i c [a] collector-emitter voltage, v ce [v] characteristics figure 3. saturation voltage vs. case figure 4. saturation voltage vs. v ge temperature at variant current level 25 50 75 100 125 150 1.5 2.0 2.5 3.0 common emitter v ge = 15v i c = 24a i c = 15a collector-emitter voltage, v ce [v] case temperature, t c [ o c] 0481 21 62 0 0 4 8 12 16 24a 15a common emitter t c = 25 o c i c = 7.5a collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] figure 5. saturation voltage vs. v ge 0.1 1 10 0 500 1000 1500 2000 2500 3000 3500 ciss coss common emitter v ge = 0v, f = 1mhz t c = 25 o c crss capacitance [pf] collector-emitter voltage, v ce [v] 0481 21 62 0 0 4 8 12 16 24a 15a common emitter t c = 125 o c i c = 7.5a collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] figure 6. capacitance characteristics
fga15n120antd / fga15n120antd_f 109 1200 v, 15 a npt trench igbt ?2006 fairchild semiconductor corporation 5 www.fairchildsemi.com fga15n120antd / fga15n120antd_f109 rev. c0 typical performance characteristics (continued) figure 7. turn-on characteristics vs. gate figure 8. turn-off characteristics vs. gate resistance resistance 0 10203040506070 1 10 100 common emitter v cc = 600v, v ge = 15v i c = 15a t c = 25 o c t c = 125 o c td(on) tr switching time [ns] gate resistance, r g [ ? ] 0 10203040506070 10 100 1000 common emitter v cc = 600v, v ge = 15v i c = 15a t c = 25 o c t c = 125 o c td(off) tf switching time [ns] gate resistance, r g [ ? ] figure 9. switching loss vs. gate resistance figure 10. turn-on characteristics vs. 0 10203040506070 1 10 common emitter v cc = 600v, v ge = 15v i c = 15a t c = 25 o c t c = 125 o c eon eoff switching loss [mj] gate resistance, r g [ ? ] 10 15 20 25 30 10 100 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c tr td(on) switching time [ns] collector current, i c [a] collector current figure 11. turn-off characteristics vs. figure 12. switching loss vs. collector current collector current 10 15 20 25 30 10 100 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c td(off) tf switching time [ns] collector current, i c [a] 5 1015202530 0.1 1 10 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c eon eoff switching loss [mj] collector current, i c [a]
fga15n120antd / fga15n120antd_f 109 1200 v, 15 a npt trench igbt ?2006 fairchild semiconductor corporation 6 www.fairchildsemi.com fga15n120antd / fga15n120antd_f109 rev. c0 typical performance characteristics (continued) figure 13. gate charge characteristics figure 14. soa characteristics 0 20 40 60 80 100 120 0 3 6 9 12 15 600v 400v common emitter r l = 40 ? t c = 25 o c vcc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0.1 1 10 100 1000 0.01 0.1 1 10 100 50 ? s 100 ? s 1ms dc operation ic max (pulsed) ic max (continuous) single nonrepetitive pulse tc = 25 o c curves must be derated linearly with increase in temperature collector current, ic [a] collector - emitter voltage, v ce [v] figure 15. turn-off soa 10 100 1000 1 10 100 safe operating area v ge = 15v, t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 1e-5 1e-4 1e-3 0.01 0.1 1 10 1e-3 0.01 0.1 1 10 0.1 0.5 0.2 0.05 0.02 0.01 single pulse thermal response [zthjc] rectangular pulse duration [sec] pdm t1 t2 duty factor d = t1 / t2 peak tj = pdm ? zthjc + t c figure 16. transient thermal impedance of igbt
fga15n120antd / fga15n120antd_f 109 1200 v, 15 a npt trench igbt ?2006 fairchild semiconductor corporation 7 www.fairchildsemi.com fga15n120antd / fga15n120antd_f109 rev. c0 typical performance characteristics (continued) figure 17. forward characteristics figure 18. reverse recovery current 0.1 1 10 50 0.0 0.4 0.8 1.2 1.6 2.0 2.4 t c = 125 o c t c = 25 o c t j = 25 o c t j = 125 o c forward voltage , v f [v] forward current , i f [a] 5 10152025 0 5 10 15 20 25 30 di/dt = 100a/ ? s di/dt = 200a/ ? s reverse recovery currnet , i rr [a] forward current , i f [a] figure 19. stored charge figure 20. reverse recovery time 5 10152025 0 1000 2000 3000 4000 5000 6000 7000 di/dt = 100a/ ? s di/dt = 200a/ ? s stored recovery charge , q rr [nc] forward current , i f [a] 5 10152025 0 100 200 300 400 di/dt = 100a/ ? s di/dt = 200a/ ? s reverse recovery time , t rr [ns] forward current , i f [a]
fga15n120antd / fga15n120antd_f 109 1200 v, 15 a npt trench igbt ?2006 fairchild semiconductor corporation 8 www.fairchildsemi.com fga15n120antd / fga15n120antd_f109 rev. c0 mechanical dimensions dimensions in millimeters to-3p
fga15n120antd / fga15n120antd_f 109 1200 v, 15 a npt trench igbt ?2006 fairchild semiconductor corporation 9 www.fairchildsemi.com fga15n120antd / fga15n120antd_f109 rev. c0 mechanical dimensions dimensions in millimeters to-3pn
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?2006 fairchild semiconductor corporation 10 www.fairchildsemi.com fga15n120antd / fga15n120antd_f109 rev. c0
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